Role of N defects in paramagnetic CrN at finite temperatures from first principles

E. Mozafari, B. Alling, P. Steneteg, and Igor A. Abrikosov
Phys. Rev. B 91, 094101 – Published 2 March 2015
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Abstract

Simulations of defects in paramagnetic materials at high temperature constitute a formidable challenge to solid-state theory due to the interaction of magnetic disorder, vibrations, and structural relaxations. CrN is a material where these effects are particularly large due to a strong magnetolattice coupling and a tendency for deviations from the nominal 1:1 stoichiometry. In this work, we present a first-principles study of nitrogen vacancies and nitrogen interstitials in CrN at elevated temperature. We report on formation energetics, the geometry of interstitial nitrogen dimers, and the impact on the electronic structure caused by the defects. We find a vacancy formation energy of 2.28 eV with a small effect of temperature, i.e., a formation energy for N interstitial in the form of a 111-oriented split bond of 3.77 eV with an increase to 3.97 at 1000 K. Vacancies are found to add three electrons, while split-bond interstitial adds one electron to the conduction band. The band gap of defect-free CrN is smeared out due to vibrations, although it is difficult to draw a conclusion about the exact temperature at which the band gap closes from our calculations. However, it is clear that at 900 K there is a nonzero density of electronic states at the Fermi level. At 300 K, our results indicate a border case where the band gap is about to close.

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  • Received 21 October 2014

DOI:https://doi.org/10.1103/PhysRevB.91.094101

©2015 American Physical Society

Authors & Affiliations

E. Mozafari1,*, B. Alling1, P. Steneteg1, and Igor A. Abrikosov1,2,3

  • 1Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
  • 2Materials Modeling and Development Laboratory, NUST “MISIS”, 119049 Moscow, Russia
  • 3LOCOMAS Laboratory, Tomsk State University, 634050 Tomsk, Russia

  • *elhmo@ifm.liu.se

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Issue

Vol. 91, Iss. 9 — 1 March 2015

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