Exciton band structure of monolayer MoS2

Fengcheng Wu, Fanyao Qu, and A. H. MacDonald
Phys. Rev. B 91, 075310 – Published 24 February 2015

Abstract

We address the properties of excitons in monolayer MoS2 from a theoretical point of view, showing that low-energy excitonic states occur both at the Brillouin-zone center and at the Brillouin-zone corners, that binding energies at the Brillouin-zone center deviate strongly from the (n1/2)2 pattern of the two-dimensional hydrogenic model, and that the valley-degenerate exciton doublet at the Brillouin-zone center splits at finite momentum into an upper mode with nonanalytic linear dispersion and a lower mode with quadratic dispersion. Although monolayer MoS2 is a direct-gap semiconductor when classified by its quasiparticle band structure, it may well be an indirect gap material when classified by its excitation spectra.

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  • Received 9 January 2015
  • Revised 11 February 2015

DOI:https://doi.org/10.1103/PhysRevB.91.075310

©2015 American Physical Society

Authors & Affiliations

Fengcheng Wu1, Fanyao Qu1,2,*, and A. H. MacDonald1,†

  • 1Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
  • 2Instituto de Física, Universidade de Brasília, Brasília-DF 70919-970, Brazil

  • *fanyao@unb.br
  • macdpc@physics.utexas.edu

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Issue

Vol. 91, Iss. 7 — 15 February 2015

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