Nitrogen vacancy, self-interstitial diffusion, and Frenkel-pair formation/dissociation in B1 TiN studied by ab initio and classical molecular dynamics with optimized potentials

D. G. Sangiovanni, B. Alling, P. Steneteg, L. Hultman, and I. A. Abrikosov
Phys. Rev. B 91, 054301 – Published 2 February 2015

Abstract

We use ab initio and classical molecular dynamics (AIMD and CMD) based on the modified embedded-atom method (MEAM) potential to simulate diffusion of N vacancy and N self-interstitial point defects in B1 TiN. TiN MEAM parameters are optimized to obtain CMD nitrogen point-defect jump rates in agreement with AIMD predictions, as well as an excellent description of TiNx(0.7<x1) elastic, thermal, and structural properties. We determine N dilute-point-defect diffusion pathways, activation energies, attempt frequencies, and diffusion coefficients as a function of temperature. In addition, the MD simulations presented in this paper reveal an unanticipated atomistic process, which controls the spontaneous formation of N self-interstitial/N vacancy (NI/NV) pairs (Frenkel pairs), in defect-free TiN. This entails that the N lattice atom leaves its bulk position and bonds to a neighboring N lattice atom. In most cases, Frenkel-pair NI and NV recombine within a fraction of ns; ∼50% of these processes result in the exchange of two nitrogen lattice atoms (NNExc). Occasionally, however, Frenkel-pair N-interstitial atoms permanently escape from the anion vacancy site, thus producing unpaired NI and NV point defects.

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  • Received 25 August 2014
  • Revised 7 January 2015

DOI:https://doi.org/10.1103/PhysRevB.91.054301

©2015 American Physical Society

Authors & Affiliations

D. G. Sangiovanni1,*, B. Alling1, P. Steneteg1, L. Hultman1, and I. A. Abrikosov1,2,3

  • 1Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
  • 2Materials Modeling and Development Laboratory, National University of Science and Technology ‘MISIS’, 119049 Moscow, Russia
  • 3LOCOMAS Laboratory, Tomsk State University, 634050 Tomsk, Russia

  • *Corresponding author: davsan@ifm.liu.se

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Vol. 91, Iss. 5 — 1 February 2015

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