Impurities and electronic localization in graphene bilayers

H. P. Ojeda Collado, Gonzalo Usaj, and C. A. Balseiro
Phys. Rev. B 91, 045435 – Published 28 January 2015

Abstract

We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe nonmagnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field-induced gap is partially filled by strongly localized impurity states. Interestingly, the structure, distribution, and localization length of these states depend on the field polarization.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 21 November 2014
  • Revised 16 January 2015

DOI:https://doi.org/10.1103/PhysRevB.91.045435

©2015 American Physical Society

Authors & Affiliations

H. P. Ojeda Collado1, Gonzalo Usaj1,2, and C. A. Balseiro1,2

  • 1Centro Atómico Bariloche and Instituto Balseiro, Comisión Nacional de Energía Atómica, 8400 S. C. de Bariloche, Argentina
  • 2Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 4 — 15 January 2015

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×