Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2

Karan Banerjee, Jaesung Son, Praveen Deorani, Peng Ren, Lan Wang, and Hyunsoo Yang
Phys. Rev. B 90, 235427 – Published 17 December 2014

Abstract

Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative MR contribution with increasing temperature and a robustness of the topological surface states to external disorder.

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  • Received 5 February 2014
  • Revised 29 November 2014

DOI:https://doi.org/10.1103/PhysRevB.90.235427

©2014 American Physical Society

Authors & Affiliations

Karan Banerjee1, Jaesung Son1, Praveen Deorani1, Peng Ren2, Lan Wang2,3,*, and Hyunsoo Yang1,†

  • 1Department of Electrical and Computer Engineering, NUSNNI, National University of Singapore, 117576 Singapore
  • 2School of Physical and Mathematical Science, Nanyang Technological University, 637371 Singapore
  • 3RMIT University, School of Applied Sciences, Department of Physics, VIC 3000, Australia

  • *WangLan@ntu.edu.sg
  • eleyang@nus.edu.sg

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Vol. 90, Iss. 23 — 15 December 2014

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