Integer and half-integer quantum Hall effect in silicene: Influence of an external electric field and impurities

Kh. Shakouri, P. Vasilopoulos, V. Vargiamidis, and F. M. Peeters
Phys. Rev. B 90, 235423 – Published 15 December 2014

Abstract

The influence of silicene's strong spin-orbit interaction and of an external electric field Ez on the transport coefficients are investigated in the presence of a perpendicular magnetic field B. For finite Ez the spin and valley degeneracy of the Landau levels is lifted and leads to additional plateaus in the Hall conductivity, at half-integer values of 4e2/h, due to spin intra-Landau-level transitions that are absent in graphene. These plateaus are more sensitive to disorder and thermal broadening than the main plateaus, occurring at integral values of 4e2/h, when the Fermi level passes through the Landau levels. We also evaluate the Hall and longitudinal resistivities and critically contrast the results with those for graphene on a substrate.

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  • Received 2 October 2014

DOI:https://doi.org/10.1103/PhysRevB.90.235423

©2014 American Physical Society

Authors & Affiliations

Kh. Shakouri1, P. Vasilopoulos2, V. Vargiamidis2, and F. M. Peeters1

  • 1Departement Fysica, Universiteit Antwerpen Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
  • 2Department of Physics, Concordia University, 7141 Sherbrooke Ouest Montréal, Québec H4B 1R6, Canada

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Vol. 90, Iss. 23 — 15 December 2014

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