Locating environmental charge impurities with confluent laser spectroscopy of multiple quantum dots

M. Hauck, F. Seilmeier, S. E. Beavan, A. Badolato, P. M. Petroff, and A. Högele
Phys. Rev. B 90, 235306 – Published 8 December 2014

Abstract

We used resonant laser spectroscopy of multiple InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.

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  • Received 6 October 2014
  • Revised 25 November 2014

DOI:https://doi.org/10.1103/PhysRevB.90.235306

©2014 American Physical Society

Authors & Affiliations

M. Hauck1, F. Seilmeier1, S. E. Beavan1, A. Badolato2, P. M. Petroff3, and A. Högele1

  • 1Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, 80539 München, Germany
  • 2Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
  • 3Materials Department, University of California, Santa Barbara, California 93106, USA

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Issue

Vol. 90, Iss. 23 — 15 December 2014

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