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Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

M. A. Reshchikov, D. O. Demchenko, A. Usikov, H. Helava, and Yu. Makarov
Phys. Rev. B 90, 235203 – Published 12 December 2014

Abstract

In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated CN defect. The YL band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the CNON complex.

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  • Received 30 June 2014
  • Revised 4 November 2014

DOI:https://doi.org/10.1103/PhysRevB.90.235203

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Published by the American Physical Society

Authors & Affiliations

M. A. Reshchikov* and D. O. Demchenko

  • Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA

A. Usikov

  • Nitride Crystals, Inc., 181 East Industry Court, Suite B, Deer Park, New York 11729, USA and Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, Saint Petersburg, 197101, Russian Federation

H. Helava and Yu. Makarov

  • Nitride Crystals, Inc., 181 East Industry Court, Suite B, Deer Park, New York 11729, USA

  • *mreshchi@vcu.edu

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Vol. 90, Iss. 23 — 15 December 2014

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