Disorder-perturbed Landau levels in high-electron-mobility epitaxial graphene

Simon Maëro, Abderrezak Torche, Thanyanan Phuphachong, Emiliano Pallecchi, Abdelkarim Ouerghi, Robson Ferreira, Louis-Anne de Vaulchier, and Yves Guldner
Phys. Rev. B 90, 195433 – Published 20 November 2014

Abstract

We show that the Landau levels in epitaxial graphene in the presence of localized defects are significantly modified compared to those of an ideal system. We report on magnetospectroscopy experiments performed on high-quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated with short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies as the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments.

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  • Received 24 June 2014
  • Revised 13 October 2014

DOI:https://doi.org/10.1103/PhysRevB.90.195433

©2014 American Physical Society

Authors & Affiliations

Simon Maëro1, Abderrezak Torche1, Thanyanan Phuphachong1, Emiliano Pallecchi2, Abdelkarim Ouerghi3, Robson Ferreira1, Louis-Anne de Vaulchier1,*, and Yves Guldner1

  • 1Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université Pierre & Marie Curie, Université Paris Diderot, 24 rue Lhomond, 75231 Paris Cedex 05, France
  • 2Institut d'Electronique, de Microélectronique, et de Nanotechnologie, CNRS (UMR 8520), BP 60069, Avenue Poincaré, 59652 Villeneuve d'Asq, France
  • 3Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France

  • *louis-anne.devaulchier@ens.fr

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Issue

Vol. 90, Iss. 19 — 15 November 2014

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