Band alignments and strain effects in PbTe/Pb1xSrxTe and PbSe/Pb1xSrxSe quantum-well heterostructures

M. Simma, G. Bauer, and G. Springholz
Phys. Rev. B 90, 195310 – Published 18 November 2014

Abstract

The optical transitions and band alignments of PbTe/Pb1xSrxTe and PbSe/Pb1xSrxSe multi-quantum-well heterostructures were studied using temperature-modulated absorption spectroscopy and envelope function calculations. By taking advantage of the strain-induced splitting of conduction- and valence-band states at the different L points of the Brillouin zone, a reliable determination of the band offsets is obtained, taking into account the biaxial strain of the quantum wells derived by x-ray diffraction. Through this analysis, the normalized conduction-band offsets are determined as ΔEc/ΔEg=0.45±0.05 for the PbTe/Pb1xSrxTe system and 0.6±0.1 for the PbSe/Pb1xSrxSe system for Sr contents up to 13%. Within the experimental precision, the band offsets are independent of temperatures from 20–300 K. With these parameters, precise modeling of the energy levels and optical transitions is achieved as required for optoelectronic device applications.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 8 September 2014
  • Revised 23 October 2014

DOI:https://doi.org/10.1103/PhysRevB.90.195310

©2014 American Physical Society

Authors & Affiliations

M. Simma, G. Bauer, and G. Springholz*

  • Institut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, A-4040 Linz, Austria

  • *Corresponding author: gunther.springholz@jku.at

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 90, Iss. 19 — 15 November 2014

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×