Tuning photoinduced terahertz conductivity in monolayer graphene: Optical-pump terahertz-probe spectroscopy

Srabani Kar, Dipti R. Mohapatra, Eric Freysz, and A. K. Sood
Phys. Rev. B 90, 165420 – Published 16 October 2014
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Abstract

Optical-pump terahertz-probe differential transmission measurements of as-prepared single layer graphene (AG) (unintentionally hole doped with Fermi energy EF at 180meV), nitrogen doping compensated graphene (NDG) with EF10 meV, and thermally annealed doped graphene (TAG) are examined quantitatively to understand the opposite signs of photoinduced dynamic terahertz conductivity Δσ. It is negative for AG and TAG but positive for NDG. We show that the recently proposed mechanism of multiple generations of secondary hot carriers due to Coulomb interaction of photoexcited carriers with the existing carriers together with the intraband scattering can explain the change of photoinduced conductivity sign and its magnitude. We give a quantitative estimate of Δσ in terms of controlling parameters—the Fermi energy EF and momentum relaxation time τ. Furthermore, the cooling of photoexcited carriers is analyzed using a supercollision model which involves a defect mediated collision of the hot carriers with the acoustic phonons, thus giving an estimate of the deformation potential.

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  • Received 11 June 2014
  • Revised 16 August 2014

DOI:https://doi.org/10.1103/PhysRevB.90.165420

©2014 American Physical Society

Authors & Affiliations

Srabani Kar1,2, Dipti R. Mohapatra1, Eric Freysz3, and A. K. Sood1,2,*

  • 1Department of Physics, Indian Institute of Science, Bangalore 560 012, India
  • 2Center for Ultrafast Laser Applications, Indian Institute of Science, Bangalore 560 012, India
  • 3University of Bordeaux, LOMA, UMR CNRS 5798, 351, Cours de la liberation, 33405 Talence cedex, France

  • *Corresponding author: asood@physics.iisc.ernet.in

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Vol. 90, Iss. 16 — 15 October 2014

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