Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

S. T. Teklemichael, M. D. McCluskey, G. Buchowicz, O. D. Dubon, and E. E. Haller
Phys. Rev. B 90, 165204 – Published 17 October 2014

Abstract

Copper impurities affect optical and electronic properties in a diverse range of materials. Using IR spectroscopy, we provide evidence for a shallow Cu acceptor in Si. The observation of P1/2 excitation lines indicates a Cu acceptor with a hole ionization energy of only 27 meV, which is shallower than any of the group-III acceptors. The observed center has an IR spectrum that is characteristic of a hydrogenic acceptor. Variable-temperature Hall-effect measurements confirm this result. The observation of shallow, hydrogenic behavior is consistent with a universal level model, in which the Cu acceptor level is fixed relative to vacuum, irrespective of the host.

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  • Received 10 September 2013
  • Revised 18 August 2014

DOI:https://doi.org/10.1103/PhysRevB.90.165204

©2014 American Physical Society

Authors & Affiliations

S. T. Teklemichael and M. D. McCluskey*

  • Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA

G. Buchowicz, O. D. Dubon, and E. E. Haller

  • Department of Materials Science and Engineering, University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *mattmcc@wsu.edu

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Vol. 90, Iss. 16 — 15 October 2014

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