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Thermopower analysis of the electronic structure around the metal-insulator transition in V1xWxO2

Takayoshi Katase, Kenji Endo, and Hiromichi Ohta
Phys. Rev. B 90, 161105(R) – Published 21 October 2014

Abstract

The electronic structure across the metal-insulator (MI) transition of electron-doped V1xWxO2 epitaxial films (x=00.06) grown on αAl2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S| values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in a good linear relation with MI transition temperatures. |S| values of V1xWxO2 films at T>TS were constant at low values of 23μVK1 independently of x, which reflects a metallic electronic structure, whereas those at T<TS almost linearly decreased with logarithmic W concentrations. The gradient of 213μVK1 agrees well with kB/eln10(198μVK1), suggesting that V1xWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.

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  • Received 16 June 2014
  • Revised 30 September 2014

DOI:https://doi.org/10.1103/PhysRevB.90.161105

©2014 American Physical Society

Authors & Affiliations

Takayoshi Katase, Kenji Endo, and Hiromichi Ohta*

  • Research Institute for Electronic Science, Hokkaido University, N20W10, Sapporo 001–0020, Japan

  • *Corresponding author: hiromichi.ohta@es.hokudai.ac.jp

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Issue

Vol. 90, Iss. 16 — 15 October 2014

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