Atomic corrugation and electron localization due to Moiré patterns in twisted bilayer graphenes

Kazuyuki Uchida, Shinnosuke Furuya, Jun-Ichi Iwata, and Atsushi Oshiyama
Phys. Rev. B 90, 155451 – Published 28 October 2014

Abstract

We report on unprecedentedly large-scale density-functional calculations that clarify atomic and electronic structures of twisted bilayer graphene (BLG). We find the existence of the critical twist angle from either the AB or the AA stacking BLG, above which the two graphene layers are essentially decoupled and below which the atomic planes are corrugated and the Dirac electrons are localized. We also find a magic angle at which the Fermi velocity of the Dirac electron vanishes. We clarify that the Moiré pattern in tBLG with a tiny twist angle generates inhomogeneity for the electron systems and thus causes the drastic modification of the electronic properties, leading to flat bands at the Fermi level. Sensitivity to the Moiré of the valence-electron density and the electron state near the Fermi level is discussed.

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  • Received 5 March 2014
  • Revised 2 October 2014

DOI:https://doi.org/10.1103/PhysRevB.90.155451

©2014 American Physical Society

Authors & Affiliations

Kazuyuki Uchida*, Shinnosuke Furuya, Jun-Ichi Iwata, and Atsushi Oshiyama

  • Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan

  • *kuchida@ap.t.u-tokyo.ac.jp
  • Present address: Argo Graphics Inc., Tokyo 103-0015, Japan.

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Issue

Vol. 90, Iss. 15 — 15 October 2014

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