Abstract
The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the - and -conduction-band valleys, for which their spins may be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of -valley mixing, as evidenced by both experiment and theory.
2 More- Received 26 February 2014
- Revised 2 September 2014
DOI:https://doi.org/10.1103/PhysRevB.90.125431
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