Abstract
We report on a pronounced prolongation of the exciton decay in strongly -doped and partially compensated direct band-gap semiconductor GaAs:Mn with increasing optical excitation power. Using time-resolved photoluminescence we show that the intricate interplay of excitons, shallow and deep impurity centers in GaAs:Mn results in a complex recombination behavior that cannot be characterized in terms of simple rates. The decay can be precisely described by a model based on Shockley-Read-Hall recombination, which shows that the observed dynamics arise from a varying neutralization of shallow and deep recombination centers. This enables the investigation of the carrier dynamics in the impurity system by measuring only the exciton decay time.
- Received 21 March 2014
- Revised 4 September 2014
DOI:https://doi.org/10.1103/PhysRevB.90.125203
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