Exciton decay dynamics controlled by impurity occupation in strongly Mn-doped and partially compensated bulk GaAs

F. Münzhuber, T. Henn, T. Kiessling, W. Ossau, L. W. Molenkamp, B. Gieseking, G. V. Astakhov, and V. Dyakonov
Phys. Rev. B 90, 125203 – Published 26 September 2014

Abstract

We report on a pronounced prolongation of the exciton decay in strongly p-doped and partially compensated direct band-gap semiconductor GaAs:Mn with increasing optical excitation power. Using time-resolved photoluminescence we show that the intricate interplay of excitons, shallow and deep impurity centers in GaAs:Mn results in a complex recombination behavior that cannot be characterized in terms of simple rates. The decay can be precisely described by a model based on Shockley-Read-Hall recombination, which shows that the observed dynamics arise from a varying neutralization of shallow and deep recombination centers. This enables the investigation of the carrier dynamics in the impurity system by measuring only the exciton decay time.

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  • Received 21 March 2014
  • Revised 4 September 2014

DOI:https://doi.org/10.1103/PhysRevB.90.125203

©2014 American Physical Society

Authors & Affiliations

F. Münzhuber, T. Henn, T. Kiessling*, W. Ossau, and L. W. Molenkamp

  • Physikalisches Institut Universität Würzburg, Lehrstuhl für Experimentelle Physik III, Am Hubland, 97074 Würzburg, Germany

B. Gieseking, G. V. Astakhov, and V. Dyakonov

  • Physikalisches Institut Universität Würzburg, Lehrstuhl für Experimentelle Physik VI, Am Hubland, 97074 Würzburg, Germany

  • *tobias.kiessling@physik.uni-wuerzburg.de
  • http://www.physik.uni-wuerzburg.de/EP3
  • http://www.physik.uni-wuerzburg.de/EP6

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Issue

Vol. 90, Iss. 12 — 15 September 2014

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