Memory function approach to in-plane anisotropic resistivity in the antiferromagnetic phase of iron arsenide superconductors

Koudai Sugimoto, Peter Prelovšek, Eiji Kaneshita, and Takami Tohyama
Phys. Rev. B 90, 125157 – Published 30 September 2014

Abstract

We theoretically examine anisotropy of in-plane resistivity in the striped antiferromagnetic phase of an iron arsenide superconductor by applying a memory function approach to the ordered phase with isotropic nonmagnetic impurity. We find that the anisotropy of the scattering rate is independent of carrier density when the topology of the Fermi surface is changed after the introduction of holes. On the other hand, the anisotropy of the Drude weight monotonically decreases reflecting the distortion of the Dirac Fermi surface and eventually leads to the reverse of anisotropy of resistivity, being consistent with experiment. The origin of the anisotropy is thus attributed to the interplay of impurity scattering and anisotropic electronic states.

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  • Received 9 December 2013
  • Revised 6 September 2014

DOI:https://doi.org/10.1103/PhysRevB.90.125157

©2014 American Physical Society

Authors & Affiliations

Koudai Sugimoto1,*, Peter Prelovšek2,3, Eiji Kaneshita4, and Takami Tohyama1,5

  • 1Yukawa Institute for Theoretical Physics, Kyoto University, Kyoto 606-8502, Japan
  • 2J. Stefan Institute, SI-1000 Ljubljana, Slovenia
  • 3Faculty of Mathematics and Physics, University of Ljubljana, SI-1000 Ljubljana, Slovenia
  • 4National Institute of Technology, Sendai College, Sendai 989-3128, Japan
  • 5Department of Applied Physics, Tokyo University of Science, Tokyo 125-8585, Japan

  • *koudai@yukawa.kyoto-u.ac.jp

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Vol. 90, Iss. 12 — 15 September 2014

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