Screening of charged impurities as a possible mechanism for conductance change in graphene gas sensing

Sang-Zi Liang, Gugang Chen, Avetik R. Harutyunyan, and Jorge O. Sofo
Phys. Rev. B 90, 115410 – Published 8 September 2014

Abstract

In carbon nanotube and graphene gas sensing, the measured conductance change after the sensor is exposed to target molecules has been traditionally attributed to carrier density change due to charge transfer between the sample and the adsorbed molecule. However, this explanation has many problems when it is applied to graphene: The increased amount of Coulomb impurities should lead to decrease in carrier mobility which was not observed in many experiments, carrier density is controlled by the gate voltage in the experimental setup, and there are inconsistencies in the energetics of the charge transfer. In this paper we explore an alternative mechanism. Charged functional groups and dipolar molecules on the surface of graphene may counteract the effect of charged impurities on the substrate. Because scattering of electrons with these charged impurities has been shown to be the limiting factor in graphene conductivity, this leads to significant changes in the transport behavior. A model for the conductivity is established using the random phase approximation dielectric function of graphene and the first-order Born approximation for scattering. The model predicts optimal magnitudes for the charge and dipole moment which maximally screen a given charged impurity. The dipole screening is shown to be generally weaker than the charge screening although the former becomes more effective with higher gate voltage away from the charge neutrality point. The model also predicts that with increasing amount of adsorbates, the charge impurities eventually become saturated and additional adsorption always lead to decreasing conductivity.

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  • Received 2 July 2014
  • Revised 26 August 2014

DOI:https://doi.org/10.1103/PhysRevB.90.115410

©2014 American Physical Society

Authors & Affiliations

Sang-Zi Liang

  • Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

Gugang Chen and Avetik R. Harutyunyan

  • Honda Research Institute USA Inc., 1381 Kinnear Road, Columbus, Ohio 43212, USA

Jorge O. Sofo

  • Department of Physics and Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

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Issue

Vol. 90, Iss. 11 — 15 September 2014

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