Electronic structure of spontaneously strained graphene on hexagonal boron nitride

Pablo San-Jose, A. Gutiérrez-Rubio, Mauricio Sturla, and Francisco Guinea
Phys. Rev. B 90, 115152 – Published 29 September 2014

Abstract

Hexagonal boron nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions develop in graphene due to the moiré adhesion landscape. Simultaneously, a gap opens at the Dirac point. Here, we derive a simple low-energy electronic model for graphene aligned with the substrate, taking into account spontaneous strains at equilibrium and pseudogauge fields. We carry out a detailed characterization of the modified band structure, gap, local and global density of states, and band topology in terms of physical parameters. We show that the overall electronic structure is strongly modified by the spontaneous strains.

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  • Received 10 July 2014
  • Revised 8 September 2014

DOI:https://doi.org/10.1103/PhysRevB.90.115152

©2014 American Physical Society

Authors & Affiliations

Pablo San-Jose, A. Gutiérrez-Rubio, Mauricio Sturla, and Francisco Guinea

  • Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain

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Issue

Vol. 90, Iss. 11 — 15 September 2014

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