Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm3

Martin Feneberg, Sarah Osterburg, Karsten Lange, Christian Lidig, Bernd Garke, Rüdiger Goldhahn, Eberhard Richter, Carsten Netzel, Maciej D. Neumann, Norbert Esser, Stephanie Fritze, Hartmut Witte, Jürgen Bläsing, Armin Dadgar, and Alois Krost
Phys. Rev. B 90, 075203 – Published 18 August 2014

Abstract

The interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6×1020cm3 spectroscopic ellipsometry and photoluminescence were used to determine the dependence of the band gap energy and the Fermi edge on electron density. The band gap renormalization is the dominating effect up to an electron density of about 9×1018cm3; at higher values the Burstein-Moss effect is stronger. Exciton screening, the Mott transition, and formation of Mahan excitons are discussed. A quantitative understanding of the near gap transition energies on electron density is obtained. Higher energy features in the dielectric functions up to 10eV are not influenced by band gap renormalization.

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  • Received 28 February 2014
  • Revised 31 July 2014

DOI:https://doi.org/10.1103/PhysRevB.90.075203

©2014 American Physical Society

Authors & Affiliations

Martin Feneberg*, Sarah Osterburg, Karsten Lange, Christian Lidig, Bernd Garke, and Rüdiger Goldhahn

  • Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

Eberhard Richter and Carsten Netzel

  • Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Maciej D. Neumann and Norbert Esser

  • Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Straße 9, 12489 Berlin, Germany

Stephanie Fritze, Hartmut Witte, Jürgen Bläsing, Armin Dadgar, and Alois Krost

  • Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

  • *Corresponding author: martin.feneberg@ovgu.de

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Issue

Vol. 90, Iss. 7 — 15 August 2014

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