• Editors' Suggestion
  • Rapid Communication

Negative Hall coefficient of ultrathin niobium in Si/Nb/Si trilayers

I. Zaytseva, O. Abal'oshev, P. Dłużewski, W. Paszkowicz, L. Y. Zhu, C. L. Chien, M. Kończykowski, and Marta Z. Cieplak
Phys. Rev. B 90, 060505(R) – Published 22 August 2014

Abstract

Structural and transport properties of thin Nb layers in Si/Nb/Si trilayers with Nb layer thickness d from 1.1 nm to 50 nm have been studied. With decreasing thickness, the structure of the Nb layer changes from polycrystalline to amorphous at d3.3 nm, while the superconducting temperature Tc monotonically decreases. The Hall coefficient varies with d systematically but changes sign into negative in ultrathin films with d<1.6 nm. The influence of boundary scattering on the relaxation rate of carriers, and band broadening in the amorphous films, may contribute to this effect.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 22 July 2014
  • Revised 11 August 2014

DOI:https://doi.org/10.1103/PhysRevB.90.060505

©2014 American Physical Society

Authors & Affiliations

I. Zaytseva1, O. Abal'oshev1, P. Dłużewski1, W. Paszkowicz1, L. Y. Zhu2, C. L. Chien2, M. Kończykowski3, and Marta Z. Cieplak1

  • 1Institute of Physics, Polish Academy of Sciences, 02 668 Warsaw, Poland
  • 2Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
  • 3Laboratoire des Solides Irradies, École Polytechnique, 91128 Palaiseau, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 90, Iss. 6 — 1 August 2014

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×