Magnetoresistance of a double-layer hybrid system in a tilted magnetic field

Fariborz Parhizgar and Reza Asgari
Phys. Rev. B 90, 035438 – Published 24 July 2014

Abstract

The magnetoresistance and Hall coefficient of a doped graphene layer are investigated in the presence of a tilted magnetic field. We consider a graphene layer assembled by either another graphene layer or by a two-dimensional electron gas (2DEG) layer and with the interlayer electron-electron interaction modeled within the random phase approximation. Our calculated magnetoresistances show different interlayer screening effects between decoupled graphene-graphene and graphene-2DEG systems. We also analyze the dependence of dielectric materials as well as the distance between the layers on magnetoresistances. The angle dependence of the Hall coefficient is studied and we show that a quite large Hall resistivity occurs in the graphene layer.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
1 More
  • Received 12 March 2014
  • Revised 10 July 2014

DOI:https://doi.org/10.1103/PhysRevB.90.035438

©2014 American Physical Society

Authors & Affiliations

Fariborz Parhizgar and Reza Asgari*

  • School of Physics, Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran

  • *asgari@ipm.ir

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 90, Iss. 3 — 15 July 2014

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×