Magnetoresistance of disordered graphene: From low to high temperatures

B. Jabakhanji, D. Kazazis, W. Desrat, A. Michon, M. Portail, and B. Jouault
Phys. Rev. B 90, 035423 – Published 18 July 2014

Abstract

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from T=1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120–240 K. The maximum is observed at intermediate magnetic fields (B=26 T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low-field magnetoresistance increases continuously with T and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high-field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long- and short-range disorder in these samples.

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  • Received 9 April 2014
  • Revised 20 June 2014

DOI:https://doi.org/10.1103/PhysRevB.90.035423

©2014 American Physical Society

Authors & Affiliations

B. Jabakhanji1,2, D. Kazazis3, W. Desrat1, A. Michon4, M. Portail4, and B. Jouault1

  • 1Université Montpellier 2-CNRS, Laboratoire Charles Coulomb UMR 5221, F-34095 Montpellier, France
  • 2American University of the Middle East (AUM), College of Engineering and Technology, Egaila, Kuwait
  • 3CNRS-Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
  • 4CRHEA-CNRS UPR 10, rue B. Grégory, Parc de Sophia Antipolis, 06560 Valbonne, France

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Issue

Vol. 90, Iss. 3 — 15 July 2014

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