Abstract
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from K up to room temperature. The MR exhibits a maximum in the temperature range 120–240 K. The maximum is observed at intermediate magnetic fields ( T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low-field magnetoresistance increases continuously with and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high-field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long- and short-range disorder in these samples.
- Received 9 April 2014
- Revised 20 June 2014
DOI:https://doi.org/10.1103/PhysRevB.90.035423
©2014 American Physical Society