Abstract
The doping and strain effects on the electron transport of monolayer are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 /(Vs) in the low doping level under the strain-free condition. Applying a small strain () can improve the maximum mobility to 1150 /(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transitions between and valleys scattered by the momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the and valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of .
- Received 2 March 2014
- Revised 25 June 2014
DOI:https://doi.org/10.1103/PhysRevB.90.035414
©2014 American Physical Society