Effect of doping and strain modulations on electron transport in monolayer MoS2

Yanfeng Ge, Wenhui Wan, Wanxiang Feng, Di Xiao, and Yugui Yao
Phys. Rev. B 90, 035414 – Published 14 July 2014

Abstract

The doping and strain effects on the electron transport of monolayer MoS2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm2/(Vs) in the low doping level under the strain-free condition. Applying a small strain (3%) can improve the maximum mobility to 1150 cm2/(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transitions between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS2.

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  • Received 2 March 2014
  • Revised 25 June 2014

DOI:https://doi.org/10.1103/PhysRevB.90.035414

©2014 American Physical Society

Authors & Affiliations

Yanfeng Ge1,*, Wenhui Wan1,*, Wanxiang Feng1,†, Di Xiao2, and Yugui Yao1,‡

  • 1School of Physics, Beijing Institute of Technology, Beijing 100081, China
  • 2Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA

  • *These authors contributed equally to this work.
  • wxfeng@bit.edu.cn
  • ygyao@bit.edu.cn

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Vol. 90, Iss. 3 — 15 July 2014

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