Subpicosecond adiabatic rapid passage on a single semiconductor quantum dot: Phonon-mediated dephasing in the strong-driving regime

Reuble Mathew, Eric Dilcher, Angela Gamouras, Ajan Ramachandran, Hong Yi Shi Yang, Sabine Freisem, Dennis Deppe, and Kimberley C. Hall
Phys. Rev. B 90, 035316 – Published 25 July 2014

Abstract

We demonstrate adiabatic rapid passage on a subpicosecond time scale in a single semiconductor quantum dot, enabling the exploration of a regime of strong (and rapidly varying) Rabi energies for optical control of excitons. An observed dependence of the exciton inversion efficiency on the sign of the pulse chirp demonstrates the dominance of phonon-mediated dephasing, which is suppressed for positive chirp at low temperature. Our findings will support the realization of dynamical decoupling strategies and suggest that multiphonon emission and/or non-Markovian effects should be taken into account.

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  • Received 6 February 2014
  • Revised 23 June 2014

DOI:https://doi.org/10.1103/PhysRevB.90.035316

©2014 American Physical Society

Authors & Affiliations

Reuble Mathew1, Eric Dilcher1, Angela Gamouras1, Ajan Ramachandran1, Hong Yi Shi Yang1, Sabine Freisem2, Dennis Deppe2, and Kimberley C. Hall1

  • 1Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia B3H4R2, Canada
  • 2The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816-2700, USA

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Issue

Vol. 90, Iss. 3 — 15 July 2014

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