Structure and dynamics of C60 molecules on Au(111)

Heekeun Shin, A. Schwarze, R. D. Diehl, K. Pussi, A. Colombier, É. Gaudry, J. Ledieu, G. M. McGuirk, L. N. Serkovic Loli, V. Fournée, L. L. Wang, G. Schull, and R. Berndt
Phys. Rev. B 89, 245428 – Published 19 June 2014
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Abstract

Earlier studies of C60 adsorption on Au(111) reported many interesting and complex features. We have performed coordinated low-energy electron diffraction, scanning tunneling microscopy (STM), and density functional theory studies to elucidate some of the details of the monolayer commensurate (2√3 × 2√3)R30° phase. We have identified the adsorption geometries of the two states that image as dim and bright in STM. These consist of a C60 molecule with a hexagon side down in a vacancy (hex-vac) and a C60 molecule with a carbon-carbon 6:6 bond down on a top site (6:6-top), respectively. We have studied the detailed geometries of these states and find that there is little distortion of the C60 molecules, but there is a rearrangement of the substrate near the C60 molecules. The two types of molecules differ in height, by about 0.7 Å, which accounts for most of the difference in their contrast in the STM images. The monolayer displays dynamical behavior, in which the molecules flip from bright to dim, and vice versa. We interpret this flipping as the result of the diffusion of vacancies in the surface layers of the substrate. Our measurements of the dynamics of this flipping from one state to the other indicate that the activation energy is 0.66 ± 0.03 eV for flips that involve nearest-neighbor C60 molecules, and 0.93 ± 0.03 for more distant flips. Based on calculated activation energies for vacancies diffusing in Au, we interpret these to be a result of surface vacancy diffusion and bulk vacancy diffusion. These results are compared to the similar system of Ag(111)-(2√3 × 2√3)R30°-C60. In both systems, the formation of the commensurate C60 monolayer produces a large number of vacancies in the top substrate layer that are highly mobile, effectively melting the interfacial metal layer at temperatures well below their normal melting temperatures.

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  • Received 21 March 2014
  • Revised 3 June 2014

DOI:https://doi.org/10.1103/PhysRevB.89.245428

©2014 American Physical Society

Authors & Affiliations

Heekeun Shin, A. Schwarze, and R. D. Diehl

  • Department of Physics, Penn State University, University Park, Pennsylvania 16802, USA

K. Pussi

  • Department of Mathematics and Physics, Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta, Finland

A. Colombier, É. Gaudry, J. Ledieu, G. M. McGuirk, L. N. Serkovic Loli, and V. Fournée

  • Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, Parc de Saurupt, CS50840, F-54011 Nancy Cedex, France

L. L. Wang

  • Division of Materials Science and Engineering, Ames Laboratory, U.S. Department of Energy, Ames, Iowa 50011, USA

G. Schull

  • Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 (CNRS, Université de Strasbourg), 67034 Strasbourg, France

R. Berndt

  • Institut fur Experimentelle und Angewandte Physik, Christian-Albrechts-Universitt zu Kiel, D-24098 Kiel, Germany

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Issue

Vol. 89, Iss. 24 — 15 June 2014

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