Abstract
We investigate signatures of electronic correlations in the narrow-gap semiconductor by means of electrical resistivity and thermodynamic measurements performed on single crystals of , , and , complemented by a study of the 4 analog material . We find that the inclusion of sizable amounts of Mn and Zn dopants into does not induce an insulator-to-metal transition. Our study indicates that both substitution of Zn onto the Ga site and replacement of Fe by Mn introduces states into the semiconducting gap that remain localized even at highest doping levels. Most importantly, using neutron powder diffraction measurements, we establish that orders magnetically above room temperature in a complex structure, which is almost unaffected by the doping with Mn and Zn. Using realistic many-body calculations within the framework of dynamical mean field theory (DMFT), we argue that while the iron atoms in are dominantly in an state, there are strong charge and spin fluctuations on short-time scales, which are independent of temperature. Further, the low magnitude of local contributions to the spin susceptibility advocates an itinerant mechanism for the spin response in . Our joint experimental and theoretical investigations classify as a correlated band insulator with only small dynamical correlation effects, in which nonlocal exchange interactions are responsible for the spin gap of 0.4 eV and the antiferromagnetic order. We show that hole doping of leads, within DMFT, to a notable strengthening of many-body renormalizations.
9 More- Received 13 January 2014
- Revised 14 April 2014
DOI:https://doi.org/10.1103/PhysRevB.89.195102
©2014 American Physical Society