Electronic correlations in FeGa3 and the effect of hole doping on its magnetic properties

M. B. Gamża, J. M. Tomczak, C. Brown, A. Puri, G. Kotliar, and M. C. Aronson
Phys. Rev. B 89, 195102 – Published 6 May 2014
PDFHTMLExport Citation

Abstract

We investigate signatures of electronic correlations in the narrow-gap semiconductor FeGa3 by means of electrical resistivity and thermodynamic measurements performed on single crystals of FeGa3, Fe1xMnxGa3, and FeGa3yZny, complemented by a study of the 4d analog material RuGa3. We find that the inclusion of sizable amounts of Mn and Zn dopants into FeGa3 does not induce an insulator-to-metal transition. Our study indicates that both substitution of Zn onto the Ga site and replacement of Fe by Mn introduces states into the semiconducting gap that remain localized even at highest doping levels. Most importantly, using neutron powder diffraction measurements, we establish that FeGa3 orders magnetically above room temperature in a complex structure, which is almost unaffected by the doping with Mn and Zn. Using realistic many-body calculations within the framework of dynamical mean field theory (DMFT), we argue that while the iron atoms in FeGa3 are dominantly in an S=1 state, there are strong charge and spin fluctuations on short-time scales, which are independent of temperature. Further, the low magnitude of local contributions to the spin susceptibility advocates an itinerant mechanism for the spin response in FeGa3. Our joint experimental and theoretical investigations classify FeGa3 as a correlated band insulator with only small dynamical correlation effects, in which nonlocal exchange interactions are responsible for the spin gap of 0.4 eV and the antiferromagnetic order. We show that hole doping of FeGa3 leads, within DMFT, to a notable strengthening of many-body renormalizations.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
9 More
  • Received 13 January 2014
  • Revised 14 April 2014

DOI:https://doi.org/10.1103/PhysRevB.89.195102

©2014 American Physical Society

Authors & Affiliations

M. B. Gamża1,*, J. M. Tomczak2,†, C. Brown3,4, A. Puri1,5, G. Kotliar2, and M. C. Aronson1,5

  • 1Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USA
  • 2Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
  • 3NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  • 4Department of Chemical and Biomolecular Engineering, University of Delaware, Delaware 19716, USA
  • 5Department of Physics and Astronomy, State University of New York, Stony Brook, New York 11794-3800, USA

  • *Current address: Department of Physics, Royal Holloway, University of London, Egham, TW20 0EX, UK.
  • Current address: Institute of Solid State Physics, Vienna University of Technology, 1040 Wien, Austria.

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 89, Iss. 19 — 15 May 2014

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×