Enhancement of gaps in thin graphitic films for heterostructure formation

J. P. Hague
Phys. Rev. B 89, 155415 – Published 11 April 2014

Abstract

There are a large number of atomically thin graphitic films with a structure similar to that of graphene. These films have a spread of band gaps relating to their ionicity and, also, to the substrate on which they are grown. Such films could have a range of applications in digital electronics, where graphene is difficult to use. I use the dynamical cluster approximation to show how electron-phonon coupling between film and substrate can enhance these gaps in a way that depends on the range and strength of the coupling. It is found that one of the driving factors in this effect is a charge density wave instability for electrons on a honeycomb lattice that can open a gap in monolayer graphene. The enhancement at intermediate coupling is sufficiently large that spatially varying substrates and superstrates could be used to create heterostructures in thin graphitic films with position-dependent electron-phonon coupling and gaps, leading to advanced electronic components.

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  • Received 21 June 2013
  • Revised 24 March 2014

DOI:https://doi.org/10.1103/PhysRevB.89.155415

©2014 American Physical Society

Authors & Affiliations

J. P. Hague*

  • The Open University, Walton Hall, Milton Keynes MK7 6AA, United Kingdom

  • *j.p.hague@open.ac.uk

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Vol. 89, Iss. 15 — 15 April 2014

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