Abstract
The topological crystalline insulator SnTe has been grown epitaxially on a BiTe buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, - and -type carriers are found to coexist, and Shubnikov–de Haas oscillation data suggest that the -type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a -type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.
- Received 5 May 2013
DOI:https://doi.org/10.1103/PhysRevB.89.121302
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