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Topological surface transport in epitaxial SnTe thin films grown on Bi2Te3

A. A. Taskin, Fan Yang, Satoshi Sasaki, Kouji Segawa, and Yoichi Ando
Phys. Rev. B 89, 121302(R) – Published 17 March 2014
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Abstract

The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov–de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

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  • Received 5 May 2013

DOI:https://doi.org/10.1103/PhysRevB.89.121302

©2014 American Physical Society

Authors & Affiliations

A. A. Taskin*, Fan Yang, Satoshi Sasaki, Kouji Segawa, and Yoichi Ando

  • Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

  • *taskin@sanken.osaka-u.ac.jp
  • y_ando@sanken.osaka-u.ac.jp

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Issue

Vol. 89, Iss. 12 — 15 March 2014

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