Low dimensionality of the surface conductivity of diamond

Moritz V. Hauf, Patrick Simon, Max Seifert, Alexander W. Holleitner, Martin Stutzmann, and Jose A. Garrido
Phys. Rev. B 89, 115426 – Published 19 March 2014

Abstract

Undoped diamond, a remarkable bulk electrical insulator, exhibits a high surface conductivity in air when the surface is hydrogen terminated. Although theoretical models have claimed that a two-dimensional hole gas is established as a result of surface energy-band bending, no definitive experimental demonstration has been reported so far. Here, we prove the two-dimensional character of the surface conductivity by low-temperature characterization of diamond in-plane gated field-effect transistors that enable the lateral confinement of the transistor's drain-source channel to nanometer dimensions. In these devices, we observe Coulomb blockade effects of multiple quantum islands varying in size with the gate voltage. The charging energy and thus the size of these zero-dimensional islands exhibit a gate-voltage dependence which is the direct result of the two-dimensional character of the conductive channel formed at hydrogen-terminated diamond surfaces.

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  • Received 1 November 2013

DOI:https://doi.org/10.1103/PhysRevB.89.115426

©2014 American Physical Society

Authors & Affiliations

Moritz V. Hauf, Patrick Simon, Max Seifert, Alexander W. Holleitner, Martin Stutzmann, and Jose A. Garrido*

  • Walter Schottky Institute, Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany

  • *joseantonio.garrido@wsi.tum.de

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Issue

Vol. 89, Iss. 11 — 15 March 2014

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