Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation

Guoqiang Yu, Pramey Upadhyaya, Kin L. Wong, Wanjun Jiang, Juan G. Alzate, Jianshi Tang, Pedram Khalili Amiri, and Kang L. Wang
Phys. Rev. B 89, 104421 – Published 25 March 2014
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Abstract

The influence of spin-Hall-effect spin torque (SHE-ST) induced by in-plane charge current was studied in microscale Ta/Co20Fe60B20/TaOx films with perpendicular magnetization. Simultaneous electrical transport and polar magneto-optical Kerr effect (MOKE) imaging experiments were used to investigate the switching dynamics. A rich set of switching behaviors was observed, which can be well understood by analyzing a switching-phase diagram and polar MOKE images, considering the competition between SHE-ST and the externally applied magnetic field. Furthermore, we found that domain walls with a particular chirality were dominant in our devices, which suggests the presence of the Dzyaloshinskii-Moriya interaction in the present material system.

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  • Received 26 November 2013
  • Revised 11 February 2014

DOI:https://doi.org/10.1103/PhysRevB.89.104421

©2014 American Physical Society

Authors & Affiliations

Guoqiang Yu, Pramey Upadhyaya, Kin L. Wong, Wanjun Jiang, Juan G. Alzate, Jianshi Tang, Pedram Khalili Amiri, and Kang L. Wang§

  • Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA

  • *Authors to whom correspondence should be addressed.
  • Email address: guoqiangyu@ucla.edu
  • Email address: pedramk@ucla.edu
  • §Email address: wang@seas.ucla.edu

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Issue

Vol. 89, Iss. 10 — 1 March 2014

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