Tunneling into the Mott insulator Sr2IrO4

John Nichols, Noah Bray-Ali, Armin Ansary, Gang Cao, and Kwok-Wai Ng
Phys. Rev. B 89, 085125 – Published 24 February 2014

Abstract

We studied the single-layered iridate Sr2IrO4 with a scanning tunneling microscope. The finite low temperature conductance enables the electronic structure of this antiferromagnetic Mott insulator to be measured by tunneling spectroscopy. We imaged the topography of freshly cleaved surfaces and measured differential tunneling conductance at cryogenic temperatures. We found the Mott gap in the tunneling density of states to be 2Δ=615 meV. Within the Mott gap, additional shoulders are observed which are interpreted as inelastic loss features due to magnons.

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  • Received 22 August 2012
  • Revised 13 December 2013

DOI:https://doi.org/10.1103/PhysRevB.89.085125

©2014 American Physical Society

Authors & Affiliations

John Nichols1, Noah Bray-Ali2,3, Armin Ansary1, Gang Cao1, and Kwok-Wai Ng1

  • 1Center for Advanced Materials, Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055, USA
  • 2Joint Quantum Institute, University of Maryland, College Park, Maryland 20742-4111, USA
  • 3National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA

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Issue

Vol. 89, Iss. 8 — 15 February 2014

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