Abstract
We report low temperature magnetotransport measurements on a high mobility () two-dimensional electron system on a H-terminated Si(111) surface. We observe the integral quantum Hall effect at all filling factors and find that develops in an unusually narrow temperature range. An extended, exclusively even numerator, fractional quantum Hall hierarchy occurs surrounding , consistent with twofold valley-degenerate composite fermions (CFs). We determine activation energies and estimate the CF mass.
- Received 12 October 2012
- Revised 13 November 2013
DOI:https://doi.org/10.1103/PhysRevB.89.041107
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