Quantum phase transitions of a disordered antiferromagnetic topological insulator

P. Baireuther, J. M. Edge, I. C. Fulga, C. W. J. Beenakker, and J. Tworzydło
Phys. Rev. B 89, 035410 – Published 9 January 2014

Abstract

We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-consistent Born approximation reliably locates the boundaries of this so-called “statistical” topological phase.

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  • Received 7 October 2013

DOI:https://doi.org/10.1103/PhysRevB.89.035410

©2014 American Physical Society

Authors & Affiliations

P. Baireuther, J. M. Edge, I. C. Fulga, and C. W. J. Beenakker

  • Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands

J. Tworzydło

  • Institute of Theoretical Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00–681 Warsaw, Poland

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Issue

Vol. 89, Iss. 3 — 1 January 2014

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