Experimental demonstration of the universal energy level alignment rule at oxide/organic semiconductor interfaces

L. Chai, R. T. White, M. T. Greiner, and Z. H. Lu
Phys. Rev. B 89, 035202 – Published 10 January 2014

Abstract

In this work, our experimental demonstration of the universal energy level alignment rule at oxide/organic semiconductor interfaces is reported. Photoemission spectroscopy is used to show the three different regimes of the energy level alignment: the lowest unoccupied molecular orbital (LUMO) is pinned to the substrate Fermi level at the extreme low end of work functions; the energy offset of the highest occupied molecular orbital (HOMO) follows the Schottky-Mott rule; the HOMO is pinned to the substrate Fermi level at the extreme high end of work functions. To demonstrate this, fullerene C60 was deposited on eight different types of transition-metal oxides, ZrO2, TiO2, NiO, Co3O4, CuO, V2O5, MoO3, and WO3, followed by in situ ultraviolet photoemission spectroscopy.

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  • Received 28 February 2013
  • Revised 9 December 2013

DOI:https://doi.org/10.1103/PhysRevB.89.035202

©2014 American Physical Society

Authors & Affiliations

L. Chai, R. T. White, M. T. Greiner, and Z. H. Lu*

  • Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario, Canada M5S 3E4

  • *zhenghong.lu@utoronto.ca

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Vol. 89, Iss. 3 — 15 January 2014

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