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Effect of weak impurities on electronic properties of graphene: Functional renormalization-group analysis

A. Katanin
Phys. Rev. B 88, 241401(R) – Published 2 December 2013
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Abstract

We consider an effect of weak impurities on the electronic properties of graphene within the functional renormalization-group approach. The energy dependences of the electronic self-energy and density of states near the neutrality point are discussed. Depending on the symmetry of the impurities, the electronic damping Γ and density of states ρ can deviate substantially from those given by the self-consistent Born approximation. We investigate the crossover from the results of the self-consistent Born approximation, which are valid far from the neutrality point to the strong-coupling (diffusive) regime near the neutrality point. For impurities, which are diagonal in both valley and sublattice indices, we obtain a finite density of states at the Fermi level with values which are much bigger than the result of the self-consistent Born approximation.

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  • Received 30 May 2013

DOI:https://doi.org/10.1103/PhysRevB.88.241401

©2013 American Physical Society

Authors & Affiliations

A. Katanin

  • Institute of Metal Physics, 620990, Ekaterinburg, Russia and Ural Federal University, 620002, Ekaterinburg, Russia

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Issue

Vol. 88, Iss. 24 — 15 December 2013

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