Quantum Hall boundary state around the line defect in graphene

Hai-Bo Yao, Xiao-Ling Lü, and Yi-Song Zheng
Phys. Rev. B 88, 235419 – Published 17 December 2013

Abstract

Within the continuum model, i.e., the Dirac equation approach, we study the boundary states around the line defect in graphene in the quantum Hall regime. We find that the boundary states localize at the opposite sides of the line defect if they propagate toward the opposite directions. Meanwhile, some boundary states show simultaneously the valley and sublattice polarizations. In addition, a pseudomagnetic field induced by an inhomogeneous strain field, in place of the real magnetic field, can drive the line defect embedded graphene to the quantum valley Hall regime, due to the occurrence of the valley polarized boundary states.

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  • Received 29 September 2013

DOI:https://doi.org/10.1103/PhysRevB.88.235419

©2013 American Physical Society

Authors & Affiliations

Hai-Bo Yao, Xiao-Ling Lü, and Yi-Song Zheng*

  • Department of Physics, Jilin University, Changchun 130012, China

  • *Author to whom correspondence should be addressed: zhengys@jlu.edu.cn

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Issue

Vol. 88, Iss. 23 — 15 December 2013

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