Isotope composition dependence of the band-gap energy in diamond

H. Watanabe, T. Koretsune, S. Nakashima, S. Saito, and S. Shikata
Phys. Rev. B 88, 205420 – Published 21 November 2013
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Abstract

We present experimental results on the band-gap energies of homoepitaxial diamond films with isotopic compositions ranging from nearly pure carbon-12 (12C) to nearly pure carbon-13 (13C). Diamond crystals were grown by microwave plasma-assisted chemical vapor deposition, which controls the isotope composition and minimizes the density of impurities and defects. We find that the isotope substitution of 12C by 13C increases the band-gap energy in diamond by up to 15.4 meV at 79 K. The increase at room temperature is estimated from the temperature dependence of the band-gap renormalization due to electron-phonon interaction and is found to be even larger than that at low temperatures. These results unambiguously demonstrate the possibility of band-gap engineering of diamond via control of the isotopic composition.

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  • Received 25 March 2013

DOI:https://doi.org/10.1103/PhysRevB.88.205420

©2013 American Physical Society

Authors & Affiliations

H. Watanabe1,*, T. Koretsune2, S. Nakashima3, S. Saito2,4, and S. Shikata5

  • 1Correlated Electronics Group, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1, Higashi, Tsukuba, Ibaraki 305-8562, Japan
  • 2Department of Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku, Tokyo, 152-8551, Japan
  • 3Advanced Power Electronics Research Center, AIST, Tsukuba Central 2-13, 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • 4Materials Research Center for Element Strategy, and Research Center for Nanometer-Scale Quantum Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku, Tokyo, 152-8551, Japan
  • 5Diamond Research Group, Research Institute for Ubiquitous Energy Devices, AIST, 1-8-31, Midorigaoka, Ikeda, Osaka 563-8577, Japan

  • *Corresponding author: hideyuki-watanabe@aist.go.jp

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Issue

Vol. 88, Iss. 20 — 15 November 2013

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