• Rapid Communication

Electron spin dephasing in Mn-based II-VI diluted magnetic semiconductors

Z. Ben Cheikh, S. Cronenberger, M. Vladimirova, D. Scalbert, F. Perez, and T. Wojtowicz
Phys. Rev. B 88, 201306(R) – Published 27 November 2013

Abstract

In various manganese-based II-VI diluted magnetic semiconductors and their quantum structures, the measured variations of electron spin dephasing time in an external magnetic field are conflicting with the most advanced spin relaxation theory based on quantum kinetic equations. We demonstrate, by time-resolved optical spin beat measurements performed on high-mobility n-doped CdMnTe quantum wells, that these contradictions are resolved if one takes into account the electron spin dephasing induced by laser heating of the manganese spins. We then provide a test of the spin relaxation theory in Mn-based quantum wells by a careful comparison with existing data, including our measurements. It turns out that the theory systematically underestimates the relaxation rates by a factor of 5.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 9 September 2013

DOI:https://doi.org/10.1103/PhysRevB.88.201306

©2013 American Physical Society

Authors & Affiliations

Z. Ben Cheikh, S. Cronenberger, M. Vladimirova, and D. Scalbert

  • Laboratoire Charles Coulomb, UMR 5221 CNRS-Université Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 05, France

F. Perez

  • Institut des Nanosciences de Paris, UMR 7588 CNRS-Université Paris 6, Paris 75005, France

T. Wojtowicz

  • Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 88, Iss. 20 — 15 November 2013

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×