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Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe

B. Mitchell, D. Lee, D. Lee, A. Koizumi, J. Poplawsky, Y. Fujiwara, and V. Dierolf
Phys. Rev. B 88, 121202(R) – Published 30 September 2013

Abstract

We demonstrate the use of hydrogen-induced changes in the emission of isoelectric Eu ions, in Mg-doped p-type GaN, as a powerful probe to study the dynamics of hydrogen movement under electron-beam irradiation. We identify, experimentally, a two-step process in the dissociation of Mg-H complexes and propose, based on density functional theory, that the presence of minority carriers and the resulting charge states of hydrogen drive this process.

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  • Received 3 May 2013

DOI:https://doi.org/10.1103/PhysRevB.88.121202

©2013 American Physical Society

Authors & Affiliations

B. Mitchell1, D. Lee2, D. Lee3, A. Koizumi3, J. Poplawsky4,5, Y. Fujiwara3, and V. Dierolf1

  • 1Lehigh University, 16 Memorial Drive East, Bethlehem, Pennsylvania 18015, USA
  • 2Lawrence Livermore National Laboratory, 7000 East Avenue L-413, Livermore, California 94550, USA
  • 3Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
  • 4Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, USA
  • 5University of Tennessee, 1508 Middle Drive, Knoxville, Tennessee 37996, USA

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Issue

Vol. 88, Iss. 12 — 15 September 2013

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