Effective lattice Hamiltonian for monolayer MoS2: Tailoring electronic structure with perpendicular electric and magnetic fields

Habib Rostami, Ali G. Moghaddam, and Reza Asgari
Phys. Rev. B 88, 085440 – Published 30 August 2013

Abstract

We propose an effective lattice Hamiltonian for monolayer MoS2 in order to describe the low-energy band structure and investigate the effect of perpendicular electric and magnetic fields on its electronic structure. We derive a tight-binding model based on the hybridization of the d orbitals of molybdenum and p orbitals of sulfur atoms and then introduce a modified two-band continuum model of monolayer MoS2 by exploiting the quasidegenerate partitioning method. Our theory proves that the low-energy excitations of the system are no longer massive Dirac fermions. It reveals a difference between electron and hole masses and provides trigonal warping effects. Furthermore, we predict a valley-degeneracy-breaking effect in the Landau levels. In addition, we also show that applying a gate voltage perpendicular to the monolayer modifies the electronic structure, including the band gap and effective masses.

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  • Received 25 February 2013

DOI:https://doi.org/10.1103/PhysRevB.88.085440

©2013 American Physical Society

Authors & Affiliations

Habib Rostami1, Ali G. Moghaddam1,2, and Reza Asgari1,*

  • 1School of Physics, Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran
  • 2Department of Physics, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan 45137-66731, Iran

  • *asgari@ipm.ir

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Vol. 88, Iss. 8 — 15 August 2013

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