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Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

S. P. Łepkowski, I. Gorczyca, K. Stefańska-Skrobas, N. E. Christensen, and A. Svane
Phys. Rev. B 88, 081202(R) – Published 21 August 2013

Abstract

The deformation potentials aczD1, actD2, D3, D4, and D5 are determined for random AlGaN and InGaN alloys using electronic band structure calculations based on the density functional theory. A sublinear composition dependence is obtained for aczD1 and D3 in AlGaN, and D3 in InGaN, whereas superlinear behavior on composition is found for actD2, D4, and D5 in AlGaN, and actD2 and D5 in InGaN. The optical polarization properties of nitride quantum wells are very well described by the k·p method when the obtained deformation potentials are included. In m-plane AlGaN/AlN and InGaN/GaN quantum wells, the difference between the interband transition energies for light polarized parallel and orthogonal to the crystalline c axis compares more favorably to experimental data, than when deformation potentials previously reported in literature are used.

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  • Received 5 April 2013

DOI:https://doi.org/10.1103/PhysRevB.88.081202

©2013 American Physical Society

Authors & Affiliations

S. P. Łepkowski, I. Gorczyca, and K. Stefańska-Skrobas

  • Institute of High Pressure Physics–Unipress, Polish Academy of Sciences, ul. Sokołowska 29, 01-142 Warsaw, Poland

N. E. Christensen and A. Svane

  • Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark

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Issue

Vol. 88, Iss. 8 — 15 August 2013

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