Abstract
A series of ultrathin epitaxial films of EuNiO (ENO) were grown on a set of substrates traversing from compressive () to tensile (+2.5%) lattice mismatch. On moving from tensile to compressive strain, transport measurements demonstrate a successively suppressed Mott insulating behavior eventually resulting in a complete suppression of the insulating state at high compressive strain. Corroborating these findings, resonant soft x-ray absorption spectroscopy at the Ni edge reveals the presence of a strong multiplet splitting in the tensile strained samples that progressively weakens with increasing compressive strain. Combined with cluster calculations, the results show how cumulatively enhanced covalency (i.e., bandwidth) between Ni and O orbital derived states leads to the emergent metallic ground state not attainable in the bulk ENO.
- Received 21 May 2013
- Publisher error corrected 12 August 2013
DOI:https://doi.org/10.1103/PhysRevB.88.075116
©2013 American Physical Society
Corrections
12 August 2013