Strain-modulated Mott transition in EuNiO3 ultrathin films

D. Meyers, S. Middey, M. Kareev, M. van Veenendaal, E. J. Moon, B. A. Gray, Jian Liu, J. W. Freeland, and J. Chakhalian
Phys. Rev. B 88, 075116 – Published 8 August 2013; Erratum Phys. Rev. B 88, 079903 (2013)

Abstract

A series of ultrathin epitaxial films of EuNiO3 (ENO) were grown on a set of substrates traversing from compressive (2.4%) to tensile (+2.5%) lattice mismatch. On moving from tensile to compressive strain, transport measurements demonstrate a successively suppressed Mott insulating behavior eventually resulting in a complete suppression of the insulating state at high compressive strain. Corroborating these findings, resonant soft x-ray absorption spectroscopy at the Ni L3,2 edge reveals the presence of a strong multiplet splitting in the tensile strained samples that progressively weakens with increasing compressive strain. Combined with cluster calculations, the results show how cumulatively enhanced covalency (i.e., bandwidth) between Ni d and O p orbital derived states leads to the emergent metallic ground state not attainable in the bulk ENO.

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  • Received 21 May 2013
  • Publisher error corrected 12 August 2013

DOI:https://doi.org/10.1103/PhysRevB.88.075116

©2013 American Physical Society

Corrections

12 August 2013

Erratum

Publisher’s Note: Strain-modulated Mott transition in EuNiO3 ultrathin films [Phys. Rev. B 88, 075116 (2013)]

D. Meyers, S. Middey, M. Kareev, M. van Veenendaal, E. J. Moon, B. A. Gray, Jian Liu, J. W. Freeland, and J. Chakhalian
Phys. Rev. B 88, 079903 (2013)

Authors & Affiliations

D. Meyers1,*, S. Middey1, M. Kareev1, M. van Veenendaal2, E. J. Moon1, B. A. Gray1, Jian Liu3,4, J. W. Freeland5, and J. Chakhalian1

  • 1Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 2Department of Physics, Northern Illinois University, De Kalb, Illinois 60115, USA
  • 3Department of Physics, University of California, Berkeley, California 94720, USA
  • 4Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 5Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

  • *dmeyers@uark.edu

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Issue

Vol. 88, Iss. 7 — 15 August 2013

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