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Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

A. Useinov, Y. Saeed, N. Singh, N. Useinov, and U. Schwingenschlögl
Phys. Rev. B 88, 060405(R) – Published 19 August 2013

Abstract

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

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  • Received 13 July 2013

DOI:https://doi.org/10.1103/PhysRevB.88.060405

©2013 American Physical Society

Authors & Affiliations

A. Useinov1,*, Y. Saeed2, N. Singh2, N. Useinov3, and U. Schwingenschlögl2,†

  • 1Department of Physics, California State University, Northridge, California 91330, USA
  • 2PSE Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia
  • 3Department of Solid State Physics, Kazan Federal University, Kazan, Russia

  • *artur.useinov@csun.edu
  • udo.schwingenschlogl@kaust.edu.sa

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Issue

Vol. 88, Iss. 6 — 1 August 2013

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