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Counting statistics of hole transfer in a p-type GaAs quantum dot with dense excitation spectrum

Y. Komijani, T. Choi, F. Nichele, K. Ensslin, T. Ihn, D. Reuter, and A. D. Wieck
Phys. Rev. B 88, 035417 – Published 11 July 2013

Abstract

Low-temperature transport experiments on a p-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunneling rates into and out of the quantum dot. The extracted rates exhibit a super-linear enhancement with the bias applied across the dot, which is interpreted in terms of a dense spectrum of excited states contributing to the transport, characteristic for heavy hole systems. The full counting statistics of charge transfer events and the effect of back action is studied. The normal cumulants as well as the recently proposed factorial cumulants are calculated and discussed in view of their importance for interacting systems.

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  • Received 12 February 2013

DOI:https://doi.org/10.1103/PhysRevB.88.035417

©2013 American Physical Society

Authors & Affiliations

Y. Komijani*, T. Choi, F. Nichele, K. Ensslin, and T. Ihn

  • Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland

D. Reuter and A. D. Wieck

  • Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany

  • *Now at Department of Physics and Astronomy, University of British Columbia, Vancouver, B.C., Canada V6T 1Z1; komijani@phys.ethz.ch
  • Now at University Paderborn, Department Physik, Warburger Straße 100, 33098 Paderborn, Germany.

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Vol. 88, Iss. 3 — 15 July 2013

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