Isotope effect on the lifetime of the 2p0 state in phosphorus-doped silicon

H.-W. Hübers, S. G. Pavlov, S. A. Lynch, Th. Greenland, K. L. Litvinenko, B. Murdin, B. Redlich, A. F. G. van der Meer, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, R. Kh. Zhukavin, and V. N. Shastin
Phys. Rev. B 88, 035201 – Published 2 July 2013

Abstract

The low-temperature (∼5 K) phonon-assisted relaxation of the 2p0 state of phosphorus donors in isotopically pure, monocrystalline 28Si has been studied in the time domain using a pump-probe technique. The lifetime of the 2p0 state in 28Si:P is found to be 235 ps, which is 16% larger than the lifetime of a reference Si:P sample with a natural isotope composition. The interaction of the 2p0 state with intervalley g-type longitudinal acoustic and f-type transverse acoustic phonons determines its lifetime. This interaction, which depends on the homogeneity of the crystal, becomes weaker in 28Si because of its more perfect crystal lattice compared to natural Si, and this leads to a longer lifetime. The difference between the linewidths of the 1s(A1) → 2p0 transition in 28Si:P and natural Si:P is more than a factor of two. It follows that linewidth broadening due to isotopic composition is an inhomogeneous process.

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  • Received 22 April 2013

DOI:https://doi.org/10.1103/PhysRevB.88.035201

©2013 American Physical Society

Authors & Affiliations

H.-W. Hübers1,2,*, S. G. Pavlov1, S. A. Lynch3, Th. Greenland4, K. L. Litvinenko5, B. Murdin5, B. Redlich6, A. F. G. van der Meer6, H. Riemann7, N. V. Abrosimov7, P. Becker8, H.-J. Pohl9, R. Kh. Zhukavin10, and V. N. Shastin10

  • 1Institute of Planetary Research, German Aerospace Center (DLR), Rutherfordstrasse 2, 12489 Berlin, Germany
  • 2Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17 Juni 135, 10623 Berlin, Germany
  • 3School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom
  • 4London Centre for Nanotechnology, University College London, 17–19 Gordon Street, London WC1H 0AH, United Kingdom
  • 5Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom
  • 6Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6500 GL Nijmegen, the Netherlands
  • 7Leibniz Institute of Crystal Growth, Max-Born-Straße 2, 12489 Berlin, Germany
  • 8Physikalisch Technische Bundesanstalt, 38116 Braunschweig, Germany
  • 9VITCON Projectconsult GmbH, 07743 Jena, Germany
  • 10Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

  • *heinz-wilhelm.huebers@dlr.de

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Vol. 88, Iss. 3 — 15 July 2013

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