Nonequilibrium quantum transport through a dissipative resonant level

Chung-Hou Chung, Karyn Le Hur, Gleb Finkelstein, Matthias Vojta, and Peter Wölfle
Phys. Rev. B 87, 245310 – Published 21 June 2013

Abstract

The resonant-level model represents a paradigmatic quantum system which serves as a basis for many other quantum impurity models. We provide a comprehensive analysis of the nonequilibrium transport near a quantum phase transition in a spinless dissipative resonant-level model, extending earlier work [Phys. Rev. Lett 102, 216803 (2009)]. A detailed derivation of a rigorous mapping of our system onto an effective Kondo model is presented. A controlled energy-dependent renormalization-group approach is applied to compute the nonequilibrium current in the presence of a finite bias voltage V. In the linear-response regime V0, the system exhibits as a function of the dissipative strength a localized-delocalized quantum transition of the Kosterlitz-Thouless (KT) type. We address fundamental issues of the nonequilibrium transport near the quantum phase transition: Does the bias voltage play the same role as temperature to smear out the transition? What is the scaling of the nonequilibrium conductance near the transition? At finite temperatures, we show that the conductance follows the equilibrium scaling for V<T, while it obeys a distinct nonequilibrium profile for V>T. We furthermore provide different signatures of the transition in the finite-frequency current noise and ac conductance via a recently developed functional renormalization group (FRG) approach. The generalization of our analysis to nonequilibrium transport through a resonant level coupled to two chiral Luttinger liquid leads, generated by fractional quantum Hall edge states, is discussed. Our work on the dissipative resonant level has direct relevance to experiments on a quantum dot coupled to a resistive environment, such as H. Mebrahtu et al., [Nature (London) 488, 61 (2012)].

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  • Received 1 January 2013

DOI:https://doi.org/10.1103/PhysRevB.87.245310

©2013 American Physical Society

Authors & Affiliations

Chung-Hou Chung1,2, Karyn Le Hur3,4, Gleb Finkelstein5, Matthias Vojta6, and Peter Wölfle7,8

  • 1Department of Electrophysics, National Chiao-Tung University, HsinChu, Taiwan, Republic of China
  • 2Physics Division, National Center for Theoretical Sciences, HsinChu, Taiwan, Republic of China
  • 3Center for Theoretical Physics Ecole Polytechnique and CNRS 91128 Palaiseau, France
  • 4Department of Physics and Applied Physics, Yale University, New Haven, Connecticut, USA
  • 5Department of Physics, Duke University, Durham, North Carolina 27708, USA
  • 6Institut für Theoretische Physik, Technische Universität Dresden, 01062 Dresden, Germany
  • 7Institut für Theorie der Kondensierten Materie, KIT, 76128 Karlsruhe, Germany
  • 8Institut für Nanotechnologie, KIT, 76021 Karlsruhe, Germany

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Issue

Vol. 87, Iss. 24 — 15 June 2013

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