Electric-field-driven hole carriers and superconductivity in diamond

K. Nakamura, S. H. Rhim, A. Sugiyama, K. Sano, T. Akiyama, T. Ito, M. Weinert, and A. J. Freeman
Phys. Rev. B 87, 214506 – Published 6 June 2013

Abstract

First-principles calculations of electric-field-driven superconductivity at the hydrogenated diamond (110) surface are presented. While the hydrogens on the surface effectively maintain the intrinsic sp3 covalent nature of diamond, the hole carriers induced by an external negative electric field (E-field) lead to a metallic surface region. Importantly, the concentration of hole carriers, confined within a few carbon layers of thickness 5–10 Å below the surface, exceeds 1021 cm3, which is larger than the critical hole density responsible for superconductivity in the boron-doped diamond, while the calculated electron-phonon coupling constants are comparable in magnitude, suggesting the possibility of superconductivity with enhanced critical field.

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  • Received 11 March 2013

DOI:https://doi.org/10.1103/PhysRevB.87.214506

©2013 American Physical Society

Authors & Affiliations

K. Nakamura1,*, S. H. Rhim2,†, A. Sugiyama1, K. Sano1, T. Akiyama1, T. Ito1, M. Weinert3, and A. J. Freeman2

  • 1Department of Physics Engineering, Mie University, Tsu, Mie 514-8507, Japan
  • 2Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA
  • 3Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53201, USA

  • *kohji@phen.mie-u.ac.jp
  • sonny@u.northwestern.edu

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Issue

Vol. 87, Iss. 21 — 1 June 2013

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