Theory of nanolaser devices: Rate equation analysis versus microscopic theory

M. Lorke, T. Suhr, N. Gregersen, and J. Mørk
Phys. Rev. B 87, 205310 – Published 28 May 2013

Abstract

A rate equation theory for quantum-dot-based nanolaser devices is developed. We show that these rate equations are capable of reproducing results of a microscopic semiconductor theory, making them an appropriate starting point for complex device simulations of nanolasers. The input-output characteristics and the modulation response are investigated and the limits of the rate equation approach are discussed.

  • Received 25 July 2012

DOI:https://doi.org/10.1103/PhysRevB.87.205310

©2013 American Physical Society

Authors & Affiliations

M. Lorke*, T. Suhr, N. Gregersen, and J. Mørk

  • DTU Fotonik, Department of Photonics Engineering, and Technical University of Denmark, Building 343, 2800 Kgs. Lyngby, Denmark

  • *Present address: Bremen Center for Computational Materials Science, University of Bremen, Germany; mlorke@itp.uni-bremen.de.

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Vol. 87, Iss. 20 — 15 May 2013

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