Electronic structure of the hole-doped delafossite oxides CuCr1xMgxO2

T. Yokobori, M. Okawa, K. Konishi, R. Takei, K. Katayama, S. Oozono, T. Shinmura, T. Okuda, H. Wadati, E. Sakai, K. Ono, H. Kumigashira, M. Oshima, T. Sugiyama, E. Ikenaga, N. Hamada, and T. Saitoh
Phys. Rev. B 87, 195124 – Published 17 May 2013

Abstract

We report the detailed electronic structure of a hole-doped delafossite oxide CuCr1xMgxO2 (0x0.03) studied by photoemission spectroscopy (PES), soft x-ray absorption spectroscopy (XAS), and band-structure calculations within the local-density approximation +U (LDA+U) scheme. Cr/Cu 3p-3d resonant PES reveals that the near-Fermi-level leading structure has primarily the Cr 3d character with a minor contribution from the Cu 3d through Cu 3dO 2pCr 3d hybridization, having good agreement with the band-structure calculations. This indicates that a doped hole will have primarily the Cr 3d character. Cr 2p PES and L-edge XAS spectra exhibit typical Cr3+ features for all x, while the Cu L-edge XAS spectra exhibited a systematic change with x. This indicates now that the Cu valence is monovalent at x=0 and the doped hole should have Cu 3d character. Nevertheless, we surprisingly observed two types of charge-transfer satellites that should be attributed to Cu+ (3d10) and Cu2+ (3d9) like initial states in Cu 2p-3d resonant PES spectrum of at x=0, while Cu 2p PES spectra with no doubt shows the Cu+ character even for the lightly doped samples. We propose that these contradictory results can be understood by introducing not only the Cu 4s state, but also finite Cu 3d,4sCr 3d charge transfer via O 2p states in the ground-state electronic configuration.

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  • Received 8 November 2012

DOI:https://doi.org/10.1103/PhysRevB.87.195124

©2013 American Physical Society

Authors & Affiliations

T. Yokobori1, M. Okawa1, K. Konishi1, R. Takei1, K. Katayama1, S. Oozono2, T. Shinmura2, T. Okuda2, H. Wadati3, E. Sakai4, K. Ono4, H. Kumigashira4,5, M. Oshima6, T. Sugiyama7, E. Ikenaga7, N. Hamada8, and T. Saitoh1,*

  • 1Department of Applied Physics, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
  • 2Department of Electrical and Electronics Engineering, Kagoshima University, Kagoshima, Kagoshima 890-0065, Japan
  • 3Department of Applied Physics and Quantum-Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
  • 4Photon Factory, KEK, Tsukuba, Ibaraki 305-0801, Japan
  • 5PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0076, Japan
  • 6Department of Applied Chemistry, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
  • 7Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198, Japan
  • 8Department of Physics, Tokyo University of Science, Noda, Chiba 278-8510, Japan

  • *Author to whom correspondence should be addressed: t-saitoh@rs.kagu.tus.ac.jp

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Vol. 87, Iss. 19 — 15 May 2013

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